Reza Faraji | University of Science and Culture | Iran
Dr. Reza Faraji is a Ph.D. candidate in Electrical and Computer Engineering at Islamic Azad University, with additional academic affiliation at the University of Science and Culture, specializing in nanoelectronics and Quantum-dot Cellular Automata (QCA). He holds a Master’s degree in QCA Design, where his work centered on low-power, high-performance digital circuits. His professional experience spans research assistance and participation in industry-oriented projects, with a focus on energy-efficient architectures for future 6G-enabled IoT systems and semiconductor devices. Faraji’s research expertise encompasses nanoscale circuit design, reversible computing, QCA-based arithmetic logic unit (ALU) and full-adder design, and nanoscale device modeling, including HEMTs and MOSHEMTs. He has published influential work such as the development of a novel reversible multilayer full adder in QCA technology, a compact multilayer ALU achieving ultra-low power dissipation, and a multilayer reversible ALU (RALU) integrating Fredkin and HN gates for optimized area and power efficiency. He has also contributed to advanced modeling of AlN/β- and ε-Ga₂O₃ tri-gate MOSHEMTs for high-power and RF applications, providing theoretical insight into next-generation device performance. His contributions have been cited in multiple international journals, earning recognition for advancing low-power nanoelectronics bridging QCA computing and semiconductor technologies, making him a strong candidate for prestigious technology awards. He has 18 citations, 5 publications with an h-index of 3.
Profile: Scopus
Featured Publications
1. Faraji R., A novel reversible multilayer full adder circuit design in QCA technology. Facta Univ. Ser. Electron. Energ., 2024, 37(3), 437–453.
2. Faraji R., Design of a multilayer reversible ALU in QCA technology. J. Supercomput., 2024, 80(12), 17135–17158.
3. Khodabakhsh A.*, Faraji R., Tandem evaluation of AlN/β- and ε-Ga₂O₃ tri-gate MOSHEMTs. IEEE Trans. Electron Devices, 2025, 72(7), 3452–3460.
